Makeev, M.O., Ivanov, Y.A., Meshkov, S.A., Sinyakin, V.Y., Ivanov, A.I.
Bauman Moscow State Technical University, Moscow, Russian Federation

2015 5th International Workshop on Computer Science and Engineering: Information Processing and Control Engineering, WCSE 2015-IPCE

Abstract
In the present work the thermal destruction of AuGeNi ohmic contacts of resonant tunneling diodes using artificial aging was researched. The functional dependence of contact resistance of AuGeNi ohmic contacts of resonant tunneling diodes on time and temperature was put forward. This dependence is valid in case the temperatures are lower than 300 °C, it was determined for two parties of resonant tunneling diodes. Obtained results can be used for reliability prediction of resonant tunneling diodes and radio-electronic devices on its basis.