Makeev, M.O., Ivanov, Yu.A., Sinyakin, V.Yu., Meshkov, S.A., Agasieva, S.V., Shashurin, V.D.
Moscow State Technical University N.a. N.E. Bauman
Hyperion Ltd., Moscow, Russian Federation
In the course of the work the procedure of the quality assessment of AlAs/GaAs resonant-tunneling heterostructures with relation to their resistance to diffusion destruction was developed. The diffusional blurring of the AlAs/GaAs heterostructure layers was detected by the means of IR-spectroscopic ellipsometry. The coefficient of Al and Si diffusion in GaAs was also calculated. © 2014 CriMiCo’2014 Organizing Committee, CrSTC.