Makeev, M.O. , Ivanov, Y.A., Meshkov, S.A.
Bauman State Technical University, Moscow, Russian Federation

Semiconductors
Volume 50, Issue 1, 1 January 2016, Pages 83-88

Abstract
A technique for assessing the quality of AlAs/GaAs nanoscale resonant-tunneling heterostructures from the viewpoint of their resistance to diffusion destruction is developed. The diffusive spreading of AlAs/GaAs heterostructure layers is revealed by infrared (IR) spectral ellipsometry and the Al and Si diffusion coefficients in GaAs are determined. © 2016, Pleiades Publishing, Ltd.